• DocumentCode
    1117608
  • Title

    A simplified model to predict the linear temperature coefficient of a CMOS inverter´s delay time

  • Author

    Chang, Leon ; Vo, Khoa ; Berg, John

  • Author_Institution
    Standard Microsystems Corporation, Hauppauge, NY
  • Volume
    34
  • Issue
    8
  • fYear
    1987
  • fDate
    8/1/1987 12:00:00 AM
  • Firstpage
    1834
  • Lastpage
    1837
  • Abstract
    The Curve-fitting equation A/(1 + BT) is used in this study of the temperature dependence of a MOSFET´s drain current. This leads to a simplified delay-time model in predicting the temperature coefficient of delay-time for a CMOS circuit. Good agreement is obtained between the measured CMOS ring-oscillator delay time and the simplified model. Both the experimental and computer-simulated data suggest that the half-supply point can be used to estimate the temperature coefficient of CMOS delay time.
  • Keywords
    Circuits; Degradation; Delay effects; Equations; Intrusion detection; Predictive models; Semiconductor device modeling; Temperature dependence; Temperature distribution; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.23160
  • Filename
    1486871