DocumentCode
1117608
Title
A simplified model to predict the linear temperature coefficient of a CMOS inverter´s delay time
Author
Chang, Leon ; Vo, Khoa ; Berg, John
Author_Institution
Standard Microsystems Corporation, Hauppauge, NY
Volume
34
Issue
8
fYear
1987
fDate
8/1/1987 12:00:00 AM
Firstpage
1834
Lastpage
1837
Abstract
The Curve-fitting equation A/(1 + BT) is used in this study of the temperature dependence of a MOSFET´s drain current. This leads to a simplified delay-time model in predicting the temperature coefficient of delay-time for a CMOS circuit. Good agreement is obtained between the measured CMOS ring-oscillator delay time and the simplified model. Both the experimental and computer-simulated data suggest that the half-supply point can be used to estimate the temperature coefficient of CMOS delay time.
Keywords
Circuits; Degradation; Delay effects; Equations; Intrusion detection; Predictive models; Semiconductor device modeling; Temperature dependence; Temperature distribution; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1987.23160
Filename
1486871
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