DocumentCode
1117847
Title
Numerical simulation of nonstationary electron transport in Gunn devices in a harmonic mode oscillator circuit
Author
Curow, Matthias ; Hintz, Adrian
Author_Institution
Technical University of Hamburg-Harburg, Hamburg, Federal Republic of Germany
Volume
34
Issue
9
fYear
1987
fDate
9/1/1987 12:00:00 AM
Firstpage
1983
Lastpage
1994
Abstract
The behavior of GaAs Gunn devices in harmonic mode oscillator circuits is numerically simulated taking nonstationary electron transport into account, The output power and dynamic impedances of the Gunn device are calculated for different passive circuitries. It is shown that for maximum output power the passive circuitry should behave like a series resonant circuit.
Keywords
Circuit simulation; Electrons; Gallium arsenide; Gunn devices; Impedance; Numerical simulation; Oscillators; Power generation; Power system harmonics; RLC circuits;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1987.23185
Filename
1486896
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