Title :
Origin of Conductivity Threshold in the Solid Electrolyte Glass System: ( Ag2 S)x( As2 S3)1−x
Author :
Holbrook, Chad ; Chen, Ping ; Novita, D.I. ; Boolchand, P.
Author_Institution :
Univ. of Cincinnati, Cincinnati
Abstract :
The electrical conductivity of (Ag2S)x(As2S3)1-x glasses increases to display a step-like jump of nearly five orders of magnitude in the narrow composition range, 9% < x < 15% range. To elucidate the origin of this threshold behavior, we have now examined the molecular structure of these glasses in modulated-differential scanning calorimetry (MDSC) and Raman scattering experiments. Our MDSC results reveal bimodal glass transition temperatures (Tgs), a low-Tg and a high-Tg in the 7% < x < 40% range but unimodal ones outside this range. The low-Tg phase bears a similarity to that of the stoichiometric glass at x = 1/2, or AgAsS2, and we identify it with a Ag-rich phase formed in these glasses once x > 7%. The Ag-rich phase is thought to percolate near x ~ 9%, and to contribute to the large jump in conductivity of the glasses. The high-Tg phase represents a semiconducting As2S3 glass phase alloyed with a few mole percent of Ag2S, and it displays a reversibility window in the 8% < x < 13% range. The semiconducting phase becomes elastically flexible once x > 13%. Softening of the high-Tg phase lowers Ag+ ion migration energies and also contributes to the conductivity threshold.
Keywords :
Raman spectra; chalcogenide glasses; differential scanning calorimetry; glass structure; ionic conductivity; silver compounds; solid electrolytes; (Ag2S)x(As2S3)1-x; Raman scattering; electrical conductivity; glass structure; ionic conductivity; modulated-differential scanning calorimetry; molecular structure; semiconducting glass; solid electrolyte glass; Calorimetry; Conductivity; Displays; Glass; Raman scattering; Semiconductivity; Softening; Solids; Temperature distribution; Windows; Macroscopic phase separation; Raman scattering; modulated DSC; self-organization; solid electrolyte glasses;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2007.905540