Title :
Effect of temperature variations on optical waveguiding in GaAs multiple quantum wells
Author :
Sonek, G.J. ; Chen, Y.J.
Author_Institution :
Dept. of Electr. Eng., California Univ., Irvine, CA, USA
fDate :
7/1/1989 12:00:00 AM
Abstract :
Photoluminescence and grating coupling techniques have been used to investigate the effect of temperature variations, about room temperature, on the optical waveguiding properties of GaAs/AlGaAs multiple-quantum-well structures. The modal properties are found to exhibit a large temperature dependence near the excitonic resonance and an equally strong dependence on detuning. From the simultaneous measurement of changes in refractive index and absorption over a 20 K temperature range, it is concluded that temperature variations should be kept to within several kelvin in quantum-well devices, if substantial detuning and dielectric shifts are to be avoided
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; light absorption; luminescence of inorganic solids; optical couplers; optical dispersion; optical modulation; optical waveguides; photoluminescence; refractive index; semiconductor quantum wells; GaAs multiple quantum wells; GaAs-AlGaAs; III-V semiconductors; absorption; detuning; dielectric shifts; effect of temperature variations; excitonic resonance; grating coupling techniques; modal properties; optical waveguiding; photoluminescence; refractive index; Gallium arsenide; Gratings; Optical coupling; Optical refraction; Optical variables control; Photoluminescence; Quantum well devices; Resonance; Temperature dependence; Temperature distribution;
Journal_Title :
Lightwave Technology, Journal of
