Comparison of Type I and Type II Heterojunction Unitravelling Carrier Photodiodes for Terahertz Generation

Author

Dyson, Angela ; Henning, Ian D. ; Adams, Michael J.

Author_Institution

Univ. of Essex, Colchester

Volume

14

Issue

2

fYear

2008

Firstpage

277

Lastpage

283

Abstract

To assess the potential for terahertz generation, we have numerically simulated unitravelling carrier photodiodes with type I InGaAs/InP and type II GaAsSb-InP heterojunctions. The simulations give good agreement with published experimental results detailing device operation and 3 dB bandwidth. The optimization of these structures as photomixers by reducing the layer thickness of the absorber and varying the doping of the absorber and collector layers shows excellent potential for terahertz generation.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; photodiodes; semiconductor doping; semiconductor heterojunctions; GaAsSb-InP; InGaAs-InP; absorber; collector; doping; heterojunctions; photomixers; terahertz generation; unitravelling carrier photodiodes; Bandwidth; Frequency; Heterojunctions; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Optical superlattices; Photoconductivity; Photodiodes; Ultrafast optics; Heterodyne; numerical approximation and analysis; photodetectors; ultrafast devices;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2007.910107

Filename

4481107