DocumentCode :
1118164
Title :
Resonant tunneling device with multiple negative differential resistance: Digital and signal processing applications with reduced circuit complexity
Author :
Sen, Susanta ; Capasso, Federico ; Cho, Alfred Y. ; Sivco, Debbie
Author_Institution :
University of Calcutta, Calcutta, India
Volume :
34
Issue :
10
fYear :
1987
fDate :
10/1/1987 12:00:00 AM
Firstpage :
2185
Lastpage :
2191
Abstract :
A new approach to obtain multiple peaks in the current-voltage characteristic of a resonant-tunneling (RT) device is demonstrated. The peaks are generated using only the ground state resonance of the quantum well rather than several states, as in conventional RT devices. The separation between the peaks is voltage tunable and also the peak currents can be made nearly equal, which is necessary to use the device in a variety of circuit applications. A functional device operating at 100 K, with two peaks in the I-V has been fabricated. The first practical demonstration of circuits for frequency multiplication by a factor of five, a three-state memory and a 4-bit parity generator, using a single functional RT device each, is also reported. The use of multiple-peak RT devices in these circuits results in an order of magnitude reduction in the number component per function over conventional techniques.
Keywords :
Circuits; Complexity theory; Digital signal processing; Gallium arsenide; Gold; Physics; Resonance; Resonant tunneling devices; Stationary state; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.23215
Filename :
1486926
Link To Document :
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