Effect of diffusion and modulated frequency in an ion-implanted OPFET

Studies have been made on the effect of diffusion and modulated frequencies in an ion-implanted Si photo MESFET (OPFET). It is observed that for a particular radiation flux density and absorption coefficient, the device characteristics ( ), threshold voltage (VT), and intrinsic device parameters (Cgs,Rasds, etc.) change only at millimeter-wave frequencies. When the effect of diffusion is ignored, the modulated frequency alone also changes these terminal properties of the OP-FET at millimeter-wave frequencies, but then the changes are more prominent. The diffusion simply reduces these effects.