DocumentCode :
1118396
Title :
Base-collector junction capacitance of bipolar transistors operating at high current densities
Author :
Liou, Juin J.
Author_Institution :
University of Central Florida, Orlando, FL
Volume :
34
Issue :
11
fYear :
1987
fDate :
11/1/1987 12:00:00 AM
Firstpage :
2304
Lastpage :
2308
Abstract :
An analytical physics-based comprehensive base-collector junction capacitance model is presented. The model, which includes high-current effects, describes the base-collector space-charge-region capacitance for all operating regions, including the saturation region in which the space-charge region becomes forward biased. The present model is compared with the depletion capacitance model and significant discrepancies are predicted. An emitter-coupled logic gate circuit is used to demonstrate the practical usefulness of the model.
Keywords :
Bipolar transistors; Capacitance; Current density; Doping profiles; Electron mobility; Helium; Logic circuits; Logic gates; Predictive models; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.23236
Filename :
1486947
Link To Document :
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