Title :
Base-collector junction capacitance of bipolar transistors operating at high current densities
Author_Institution :
University of Central Florida, Orlando, FL
fDate :
11/1/1987 12:00:00 AM
Abstract :
An analytical physics-based comprehensive base-collector junction capacitance model is presented. The model, which includes high-current effects, describes the base-collector space-charge-region capacitance for all operating regions, including the saturation region in which the space-charge region becomes forward biased. The present model is compared with the depletion capacitance model and significant discrepancies are predicted. An emitter-coupled logic gate circuit is used to demonstrate the practical usefulness of the model.
Keywords :
Bipolar transistors; Capacitance; Current density; Doping profiles; Electron mobility; Helium; Logic circuits; Logic gates; Predictive models; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23236