DocumentCode :
1118416
Title :
Electromigration and low-frequency resistance fluctuations in aluminum thin-film interconnections
Author :
Neri, Bruno ; Diligenti, Alessandro ; Bagnoli, Paolo Emilio
Author_Institution :
Università degli Studi di Pisa, Pisa, Italy
Volume :
34
Issue :
11
fYear :
1987
fDate :
11/1/1987 12:00:00 AM
Firstpage :
2317
Lastpage :
2322
Abstract :
Low-frequency noise spectra originating from resistance fluctuations in Al films during electromigration were measured in the absolute temperature and current density intervals 
K and 
A/cm2. The values of SR , the resistance power spectral density, at 20 × 10-3Hz allowed the construction of an Arrhenius plot from which a grain-boundary activation energy value of about 0.6 eV was deduced. This value lies in the range of values found by other authors using different techniques. A first attempt to model the observed dependence of SR on 
and 
is also described.
K and A/cm2. The values of S and is also described.Keywords :
Aluminum; Current measurement; Density measurement; Electrical resistance measurement; Electromigration; Fluctuations; Low-frequency noise; Noise measurement; Temperature; Transistors;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.23238
Filename :
1486949
Link To Document :
