Title :
Modeling and characterization of CMOS-compatible high-voltage device structures
Author :
Arpia, Zahirp ; Salama, C. Andre T ; Hadaway, Robert A.
Author_Institution :
University of Toronto, Toronto, Ontario, Canada
fDate :
11/1/1987 12:00:00 AM
Abstract :
The design, implementation, and modeling of high-voltage MOS transistors in a Standard CMOS technology is described. High voltage n- and p-channel transistors, with breakdown voltages of 50 and 180 V, respectively, have been fabricated. A SPICE-compatible model for these transistors is described, and its accuracy verified by comparison with experimental results.
Keywords :
Breakdown voltage; CMOS process; CMOS technology; Circuit simulation; Costs; Design optimization; MOSFETs; Semiconductor device modeling; Telecommunications; Voltage control;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23241
