Temperature Dependence of Thermal Conductivity and Boundary Resistance in THz Quantum Cascade Lasers

Author

Vitiello, Miriam Serena ; Scamarcio, Gaetano ; Spagnolo, Vincenzo

Author_Institution

Univ. degli Studi di Bari, Bari

Volume

14

Issue

2

fYear

2008

Firstpage

431

Lastpage

435

Abstract

We measured the lattice temperature distribution, the cross-plane thermal conductivity , and the thermal boundary resistance (TBR) of the As quantum cascade lasers (QCLs) operating at 2.83 THz in the heat sink temperature range 45-300 K. This information was extracted from the analysis of microprobe band-to-band photoluminescence in QCLs operating in continuous wave. Both and TBR decrease monotonically at increasing temperature, the main influence on arising from the high density of interfaces.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; photoluminescence; quantum cascade lasers; submillimetre wave lasers; thermal conductivity; GaAs-Al_0.15Ga_0.85As; cross-plane thermal conductivity; heat sink; interface density; lattice temperature distribution; microprobe band-to-band photoluminescence; quantum cascade lasers; temperature 45 K to 300 K; thermal boundary resistance; Conductivity measurement; Electrical resistance measurement; Lattices; Quantum cascade lasers; Resistance heating; Temperature dependence; Temperature distribution; Temperature measurement; Thermal conductivity; Thermal resistance; Microprobe photoluminescence; terahertz quantum cascade lasers (THz QCLs); thermal boundary resistance; thermal conductivity;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2007.910102

Filename

4481135