DocumentCode
1118456
Title
Optimization of the drift region of power MOSFET´s with lateral structures and deep junctions
Author
Chen, X.B. ; Song, Z.Q. ; Li, Z.J.
Author_Institution
Chengdu Institute of Radio Engineering (CIRE), Chengdu, China
Volume
34
Issue
11
fYear
1987
fDate
11/1/1987 12:00:00 AM
Firstpage
2344
Lastpage
2350
Abstract
The electric field profile in the drift region of power MOSFET´s with lateral structures and deep junctions has been found analytically. From the analysis, the best uniform surface doping density and the depth of the drift region in offset-gate power MOSFET´s that introduces the minimum series resistance and sustains a given junction breakdown voltage is derived. Design guidelines for such MOSFET´s are proposed. The comparison with computer simulation results has shown that it is reasonable for some practical structures.
Keywords
Computer simulation; Doping; Electric resistance; MOSFET circuits; Neodymium; Semiconductor process modeling; Space charge; Surface resistance; Surface treatment; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1987.23242
Filename
1486953
Link To Document