Simplified device equations and transport coefficients for GaAs device modeling

In the analysis of submicrometer GaAs devices, consideration of hot-electron effects is imperative. A generalized current equation suggested by Thornber allows the inclusion of some of the hot-electron effects into standard drift/diffusion device models, and hence does not require too large computational resources. In this brief, we report gradient and rate coefficient tables (graphs) that are necessary to complement the standard approach for electrons in GaAs at 300 K as calculated by Monte Carlo methods.