Title :
IIA-3 enhancement of 2DEG density in GaAs/InGaAs/AlGaAs double heterojunction power MODFET structures by buried superlattice and buried p+-GaAs buffer layers
Author :
Chen, Y.K. ; Radulescu, D.C. ; Foisy, M.C. ; Tasker, P.J. ; Eastman, L.F.
fDate :
11/1/1987 12:00:00 AM
Keywords :
Atomic layer deposition; Buffer layers; Electrons; Gain; Gallium arsenide; HEMTs; Heterojunctions; Indium gallium arsenide; MODFETs; Superlattices;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23245
