Title :
IIA-4 The effect of buried p-doped layers on the current saturation mechanism in AlGaAs/InGaAs/GaAs MODFET´s
Author :
Schaff, W.J. ; Tasker, P.J. ; Foisy, M.C. ; Eastman, L.F.
fDate :
11/1/1987 12:00:00 AM
Keywords :
Carrier confinement; Degradation; Electrons; Gallium arsenide; HEMTs; Indium gallium arsenide; Laboratories; MESFETs; MODFETs; Radio frequency;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23248
