DocumentCode
1118601
Title
IIB-4 impact of cell breakdown upon power DMOSFET on-resistance
Author
Baliga, B. Jayant
Volume
34
Issue
11
fYear
1987
fDate
11/1/1987 12:00:00 AM
Firstpage
2360
Lastpage
2360
Keywords
Circuits; Conductivity; Design optimization; Electric breakdown; Electron devices; Poisson equations; Power semiconductor switches; Research and development; Topology; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1987.23256
Filename
1486967
Link To Document