Title :
IIB-4 impact of cell breakdown upon power DMOSFET on-resistance
Author :
Baliga, B. Jayant
fDate :
11/1/1987 12:00:00 AM
Keywords :
Circuits; Conductivity; Design optimization; Electric breakdown; Electron devices; Poisson equations; Power semiconductor switches; Research and development; Topology; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23256
