DocumentCode :
1118621
Title :
IIB-6 a three-dimensional high-voltage CMOS utilizing a laser-recrystallized SOI layer
Author :
Sasaki, Naoki ; Kawamura, Sadao ; Kawai, Shigeaki ; Shirato, Toru ; Nakano, M.
Volume :
34
Issue :
11
fYear :
1987
fDate :
11/1/1987 12:00:00 AM
Firstpage :
2361
Lastpage :
2361
Keywords :
CMOS technology; Circuits; Displays; Fabrication; Gallium arsenide; Heterojunctions; Implants; Isolation technology; Leakage current; Semiconductor lasers;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.23258
Filename :
1486969
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1118621
