Title :
IIIA-6 MOVPE grown GaAlAs/GaAs DH devices operating as laser diodes and bipolar transistors for optoelectronic integration
Author :
Temmyo, J. ; Hasumi, Y. ; Kozen, A.
fDate :
11/1/1987 12:00:00 AM
Keywords :
Bipolar transistors; DH-HEMTs; Diode lasers; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Monolithic integrated circuits; Optical waveguides;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23267
