Title :
Effect of X-ray irradiation on submicrometre channel length MOSFETs
Author :
Bhattacharya, P.K. ; Nandakumar, R.P.
Author_Institution :
Dept. of Electr. Eng., Southern Univ., Baton Rouge, LA, USA
fDate :
6/1/1994 12:00:00 AM
Abstract :
n-MOSFETs of channel lengths varying from 0.5 μm to 4.0 μm were exposed to X-ray radiation of doses between 3 Mrad (SiO2) and 8 Mrad (SiO2). The degradation of threshold voltage showed that there is a `rebound´ effect. This phenomena is observed because of the positive charges saturating at doses much lower than the ~24 Mrad (SiO2) observed for thick oxides and due to the production of negative charges. The effect of channel width on threshold voltage shifts for short channel MOSFETs shows that, at widths less than 7 μm, the overall small geometry effect starts to play a role instead of just the narrow width or the short channel effect
Keywords :
X-ray effects; electron traps; hole traps; insulated gate field effect transistors; 0.5 to 4 micron; 3 to 8 Mrad; MOSFETs; SiO2; X-ray irradiation; n-channel devices; rebound effect; short channel devices; small geometry effect; submicrometre channel length; threshold voltage degradation; threshold voltage shifts;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:19941009
