• DocumentCode
    1118703
  • Title

    Effect of X-ray irradiation on submicrometre channel length MOSFETs

  • Author

    Bhattacharya, P.K. ; Nandakumar, R.P.

  • Author_Institution
    Dept. of Electr. Eng., Southern Univ., Baton Rouge, LA, USA
  • Volume
    141
  • Issue
    3
  • fYear
    1994
  • fDate
    6/1/1994 12:00:00 AM
  • Firstpage
    193
  • Lastpage
    196
  • Abstract
    n-MOSFETs of channel lengths varying from 0.5 μm to 4.0 μm were exposed to X-ray radiation of doses between 3 Mrad (SiO2) and 8 Mrad (SiO2). The degradation of threshold voltage showed that there is a `rebound´ effect. This phenomena is observed because of the positive charges saturating at doses much lower than the ~24 Mrad (SiO2) observed for thick oxides and due to the production of negative charges. The effect of channel width on threshold voltage shifts for short channel MOSFETs shows that, at widths less than 7 μm, the overall small geometry effect starts to play a role instead of just the narrow width or the short channel effect
  • Keywords
    X-ray effects; electron traps; hole traps; insulated gate field effect transistors; 0.5 to 4 micron; 3 to 8 Mrad; MOSFETs; SiO2; X-ray irradiation; n-channel devices; rebound effect; short channel devices; small geometry effect; submicrometre channel length; threshold voltage degradation; threshold voltage shifts;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices and Systems, IEE Proceedings -
  • Publisher
    iet
  • ISSN
    1350-2409
  • Type

    jour

  • DOI
    10.1049/ip-cds:19941009
  • Filename
    296531
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1118703