Title :
IIIB-2 polycrystalline Si thin-film transistors fabricated at ≤800°C: Effects of grain size and {110} fiber texture
fDate :
11/1/1987 12:00:00 AM
Keywords :
CMOS technology; Crystallography; Electron devices; Glass; Grain size; Semiconductor films; Substrates; Temperature; Thin film transistors; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23269
