Title :
IIIB-3 modified Schottky behavior in shallow p+-n junctions formed by outdiffusion from Cobalt silicide
Author :
Liu, Richard ; Hillenius ; Lynch, W.T.
fDate :
11/1/1987 12:00:00 AM
Keywords :
CMOS process; Circuits; Cobalt; Degradation; Gain measurement; Implants; Schottky diodes; Semiconductor process modeling; Silicides; Thermionic emission;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23272
