• DocumentCode
    1118758
  • Title

    IIIB-6 the impact of low-temperature (Tdep≤ 800°C) silicon epitaxy deposition conditions on bipolar transistor characteristics

  • Author

    Burger, W.R. ; Reif, R.

  • Volume
    34
  • Issue
    11
  • fYear
    1987
  • fDate
    11/1/1987 12:00:00 AM
  • Firstpage
    2367
  • Lastpage
    2368
  • Keywords
    Bipolar transistors; Chemical technology; Density measurement; Diodes; Electron devices; Epitaxial growth; Leakage current; Radio frequency; Silicon; Temperature control;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.23273
  • Filename
    1486984
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1118758