Title :
IIIB-6 the impact of low-temperature (Tdep≤ 800°C) silicon epitaxy deposition conditions on bipolar transistor characteristics
Author :
Burger, W.R. ; Reif, R.
fDate :
11/1/1987 12:00:00 AM
Keywords :
Bipolar transistors; Chemical technology; Density measurement; Diodes; Electron devices; Epitaxial growth; Leakage current; Radio frequency; Silicon; Temperature control;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23273
