• DocumentCode
    1118770
  • Title

    IIIB-5 Fabrication of thin gate Oxide MOSFET´s using low-temperature plasma-enhanced chemical-vapor-deposited SiO2

  • Author

    Batey, J. ; Tierney, E. ; Li, Jie

  • Volume
    34
  • Issue
    11
  • fYear
    1987
  • fDate
    11/1/1987 12:00:00 AM
  • Firstpage
    2367
  • Lastpage
    2367
  • Keywords
    Bipolar transistors; Chemical vapor deposition; Electric breakdown; Fabrication; MOS capacitors; Plasma chemistry; Plasma devices; Plasma materials processing; Plasma temperature; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.23274
  • Filename
    1486985
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1118770