Title :
IIIB-5 Fabrication of thin gate Oxide MOSFET´s using low-temperature plasma-enhanced chemical-vapor-deposited SiO2
Author :
Batey, J. ; Tierney, E. ; Li, Jie
fDate :
11/1/1987 12:00:00 AM
Keywords :
Bipolar transistors; Chemical vapor deposition; Electric breakdown; Fabrication; MOS capacitors; Plasma chemistry; Plasma devices; Plasma materials processing; Plasma temperature; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23274
