Title :
Simulation of Laser-Based Two-Photon Absorption Induced Charge Carrier Generation in Silicon
Author :
Hales, Joel M. ; Khachatrian, Ani ; Roche, Nicolas J.-H ; Warner, Jeffrey ; Buchner, Stephen P. ; McMorrow, Dale
Author_Institution :
Annapolis Junction, Sotera Defense, Annapolis, MD, USA
Abstract :
Numerical simulation software is used to calculate quantitatively the two-photon absorption-induced carrier-density distributions generated under conditions that are experimentally relevant for single-event effects studies. The results provide valuable insight into how the magnitudes and shapes of the charge carrier distributions evolve over a large range of experimental conditions and the impacts this has for different device geometries. Furthermore, values of integrated charge are determined that can be more directly correlated with experimental observables.
Keywords :
carrier density; elemental semiconductors; silicon; two-photon processes; Si; laser-based two-photon absorption induced charge carrier generation; numerical simulation software; two-photon absorption-induced carrier-density distributions; Focusing; Laser beams; Measurement by laser beam; Nonlinear optics; Optical beams; Shape; Silicon; CMOS; free-carrier absorption; free-carrier refraction; nonlinear optics; optical Kerr effect; silicon; single-event effect (SEE); single-event upset (SEU); two-photon absorption;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2015.2422793
