DocumentCode :
1118780
Title :
IIIB-8 UPMOS—A new approach to submicrometer VLSI
Author :
Foo, P.D. ; Liu, Richard ; Orlowsky, K.J. ; Hillenius ; Lynch, W.T.
Volume :
34
Issue :
11
fYear :
1987
fDate :
11/1/1987 12:00:00 AM
Firstpage :
2368
Lastpage :
2369
Keywords :
Annealing; Capacitance; Contact resistance; Cutoff frequency; Electrical resistance measurement; Etching; Ion implantation; MOSFET circuits; Silicon; Very large scale integration;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.23275
Filename :
1486986
Link To Document :
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