DocumentCode :
1118809
Title :
IVA-2 high-speed performance of AlGaAs/GaAs heterojunction bipolar transistors with nonalloyed emitter contacts
Author :
Nagata, Kazuyuki ; Nakajima, O. ; Yamauchi, Yuji ; Ito, H. ; Nittono, T. ; Ishibashi, Takayuki
Volume :
34
Issue :
11
fYear :
1987
fDate :
11/1/1987 12:00:00 AM
Firstpage :
2369
Lastpage :
2369
Keywords :
Bipolar transistors; Circuits; Contacts; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium tin oxide; Laboratories; Propagation delay; Substrates;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.23278
Filename :
1486989
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1118809
