• DocumentCode
    1118809
  • Title

    IVA-2 high-speed performance of AlGaAs/GaAs heterojunction bipolar transistors with nonalloyed emitter contacts

  • Author

    Nagata, Kazuyuki ; Nakajima, O. ; Yamauchi, Yuji ; Ito, H. ; Nittono, T. ; Ishibashi, Takayuki

  • Volume
    34
  • Issue
    11
  • fYear
    1987
  • fDate
    11/1/1987 12:00:00 AM
  • Firstpage
    2369
  • Lastpage
    2369
  • Keywords
    Bipolar transistors; Circuits; Contacts; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium tin oxide; Laboratories; Propagation delay; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.23278
  • Filename
    1486989