DocumentCode
1118817
Title
IVA-3 GaAs/AlGaAs heterojunction emitter-down bipolar circuits fabricated on GaAs-on-Si substrates
Author
Tran, Linh T. ; Matyi, Richard J. ; Shichijo, H. ; Lee, Jae W.
Volume
34
Issue
11
fYear
1987
fDate
11/1/1987 12:00:00 AM
Firstpage
2369
Lastpage
2370
Keywords
Bipolar transistors; Circuits; Delay; Electron devices; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Read only memory; Ring oscillators; Substrates;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1987.23279
Filename
1486990
Link To Document