Title :
IVA-5 refractory p-ohmic-contact to GaAs and GaxAl1-xAs (x ~ 0.3) based on diffusion of Zn in a rapid thermal furnace
Author :
Tiwari, Sunita ; Callegari, A. ; Wright, S.
fDate :
11/1/1987 12:00:00 AM
Keywords :
Electrical resistance measurement; Electrons; Gallium arsenide; Heterojunction bipolar transistors; Implants; Ohmic contacts; Optical films; Rapid thermal processing; Solids; Zinc;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23281
