Title :
IVA-7 DC Performance of AlxGa1-xAs/GaAs P-n-p HBT´s grown by OMVPE
Author :
De Lyon, T. ; Enquist, P.M. ; Hutchby, J.A.
fDate :
11/1/1987 12:00:00 AM
Keywords :
Artificial intelligence; Circuits; Current density; Degradation; Gallium arsenide; Heterojunction bipolar transistors; Hot carriers; P-n junctions; Temperature dependence; Zinc;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23282
