• DocumentCode
    1118847
  • Title

    IVA-7 DC Performance of AlxGa1-xAs/GaAs P-n-p HBT´s grown by OMVPE

  • Author

    De Lyon, T. ; Enquist, P.M. ; Hutchby, J.A.

  • Volume
    34
  • Issue
    11
  • fYear
    1987
  • fDate
    11/1/1987 12:00:00 AM
  • Firstpage
    2371
  • Lastpage
    2371
  • Keywords
    Artificial intelligence; Circuits; Current density; Degradation; Gallium arsenide; Heterojunction bipolar transistors; Hot carriers; P-n junctions; Temperature dependence; Zinc;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.23282
  • Filename
    1486993
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1118847