DocumentCode :
1118896
Title :
IVB-2 memory effect and enhanced conductivity in Si-implanted thermally grown SiO2
Author :
Kalnitsky, Alex ; King, M.I.H. ; Boothroyd, A.R. ; Ellul, J.P.
Volume :
34
Issue :
11
fYear :
1987
fDate :
11/1/1987 12:00:00 AM
Firstpage :
2372
Lastpage :
2372
Keywords :
Annealing; Contacts; Dielectrics; EPROM; Electron traps; Material storage; Nonvolatile memory; Optical refraction; Thermal conductivity; Thermal stresses;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.23286
Filename :
1486997
Link To Document :
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