Title :
IIB-5 sidewall parasitic suppression in trench-isolated submicrometer CMOS
Author :
Foster, D.J. ; Roberts, Matthew C. ; Bolbot, P.H. ; Medhurst, P.L.
fDate :
11/1/1987 12:00:00 AM
Keywords :
CMOS process; Circuits; Contacts; Doping; Leakage current; MOS devices; Power dissipation; Semiconductor device modeling; Semiconductor process modeling; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23287
