Title :
IVB-4 vertical storage trench gated diode leakage
Author :
Voldman, S.H. ; Bryant, A. ; Noble, W.P.
fDate :
11/1/1987 12:00:00 AM
Keywords :
Capacitance; Capacitors; Dielectric substrates; Diodes; Lattices; Leakage current; Random access memory; Solid state circuits; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23288
