DocumentCode :
1118968
Title :
VA-2 New MBE buffer used to eliminate backgating in GaAs MESFET´s
Author :
Smith, F.W. ; Calawa, A.R. ; Chen, C.L. ; Manfra, Michael J. ; Mahoney, L.J.
Volume :
34
Issue :
11
fYear :
1987
fDate :
11/1/1987 12:00:00 AM
Firstpage :
2375
Lastpage :
2375
Keywords :
Buffer layers; Gallium arsenide; MESFETs; Molecular beam epitaxial growth; Optical buffering; Optical crosstalk; Optical films; Optical sensors; Optical superlattices; Substrates;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.23292
Filename :
1487003
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1118968
