DocumentCode :
1118972
Title :
Circuit Modeling of High-Frequency Electrical Conduction in Carbon Nanofibers
Author :
Madriz, Francisco R. ; Jameson, John R. ; Krishnan, Shoba ; Sun, Xuhui ; Yang, Cary Y.
Author_Institution :
Center for Nanostruct., Santa Clara Univ., Santa Clara, CA, USA
Volume :
56
Issue :
8
fYear :
2009
Firstpage :
1557
Lastpage :
1561
Abstract :
We show that the simplest possible circuit model of high-frequency electrical conduction in carbon nanofibers from 0.1 to 50 GHz is a frequency-independent resistor in parallel with a frequency-independent capacitor. The resistance is experimentally determined and represents the total dc resistance of the nanofiber and its contacts with the electrodes. The capacitance is obtained as a free parameter and has not been previously observed. The experimental method utilizes a ground-signal-ground test structure whose two-port scattering parameters (S-parameters) can be described to within plusmn0.5 dB and plusmn2deg using a simple lumped-element circuit model. The nanostructure is placed in the signal path of the test structure, and its equivalent circuit is deduced by determining what additional elements must be added to the test structure circuit model to reproduce the resulting changes in the S-parameters. This methodology is applicable to nanowires and nanotubes.
Keywords :
S-parameters; capacitors; carbon fibres; electric resistance; equivalent circuits; high-frequency effects; nanoelectronics; nanofibres; resistors; S-parameters; capacitance; carbon nanofibers; circuit model; dc resistance; equivalent circuit; frequency-independent capacitor; frequency-independent resistor; ground-signal-ground test; high-frequency electrical conduction; lumped-element circuit model; two-port scattering parameters; Capacitance; Capacitors; Circuit testing; Contact resistance; Electric resistance; Electrodes; Equivalent circuits; Frequency; Resistors; Scattering parameters; Carbon nanofiber; circuit model; electrical transport; ground–signal–ground (GSG); high frequency; nanostructures; scattering parameters (S-parameters);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2009.2022691
Filename :
5130229
Link To Document :
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