DocumentCode :
1118974
Title :
VA-3 GaAs MESFET´s with a LaB
6
self-aligned gate
Author :
Takatani, S. ; Uchida, Yasuo ; Yokotsuka, T. ; Nakashima, Hideharu
Volume :
34
Issue :
11
fYear :
1987
fDate :
11/1/1987 12:00:00 AM
Firstpage :
2375
Lastpage :
2376
Keywords :
Annealing; Breakdown voltage; Contacts; Gallium arsenide; MESFETs; Nitrogen; Schottky barriers; Schottky diodes; Tin; Transconductance;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.23293
Filename :
1487004
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1118974
