Title :
VA-1 Submicrometer self-aligned gate GaAs E/D MESFET´s with VLSI compatible threshold voltage uniformity
Author :
Tan, K.L. ; Chung, Hyun Kyu ; Chen, C.H.
fDate :
11/1/1987 12:00:00 AM
Keywords :
FETs; Gallium arsenide; Impurities; MESFETs; Molecular beam epitaxial growth; Optical buffering; Optical crosstalk; Substrates; Threshold voltage; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23294
