Title :
VA-5 the focused ion stripe transistor (FIST), a new MESFET structure produced by focused ion-beam implantation
Author :
Rensch, D.B. ; Matthews, D.S.
fDate :
11/1/1987 12:00:00 AM
Keywords :
Annealing; Avalanche breakdown; Breakdown voltage; Capacitance; Contacts; Gallium arsenide; MESFETs; Nitrogen; Schottky diodes; Tin;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23295
