Title :
VA-4 Shannon contact formation on GaAs with interfacial nitrogen incorporation
Author :
Zhang, L.C. ; Cheung, S.K. ; Cheung, N.W.
fDate :
11/1/1987 12:00:00 AM
Keywords :
Annealing; Avalanche breakdown; Breakdown voltage; Capacitance; Contacts; Gallium arsenide; MESFETs; Nitrogen; Schottky diodes; Tin;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23296
