DocumentCode

1119005

Title

VA-4 Shannon contact formation on GaAs with interfacial nitrogen incorporation

Author

Zhang, L.C. ; Cheung, S.K. ; Cheung, N.W.

Volume

34

Issue

11

fYear

1987

fDate

11/1/1987 12:00:00 AM

Firstpage

2376

Lastpage

2376

Keywords

Annealing; Avalanche breakdown; Breakdown voltage; Capacitance; Contacts; Gallium arsenide; MESFETs; Nitrogen; Schottky diodes; Tin;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1987.23296

Filename

1487007