DocumentCode :
1119103
Title :
VB-7 InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical-beam epitaxy
Author :
Campbell, Joe C. ; Tsang, W.T. ; Qua, G.J. ; Johnson, Brett C.
Volume :
34
Issue :
11
fYear :
1987
fDate :
11/1/1987 12:00:00 AM
Firstpage :
2380
Lastpage :
2380
Keywords :
Avalanche photodiodes; Bandwidth; Chemicals; Dark current; Epitaxial growth; Indium gallium arsenide; Indium phosphide; MOCVD; Molecular beam epitaxial growth; Optimized production technology;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.23305
Filename :
1487016
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1119103
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