• DocumentCode
    1119111
  • Title

    VB-6 continuous room-temperature laser operation of AlxGa1-xAs-GaAs quantum well heterostructures grown on Si

  • Author

    Deppe, Dennis G. ; Nam, D.W. ; Hsieh, Kenny Cheng-Hsiang ; Matyi, Richard J. ; Lee, Jae W. ; Shichijo, H. ; Epler, J.E. ; Burnham, R.D. ; Chung, H.F. ; Paoli, T.L.

  • Volume
    34
  • Issue
    11
  • fYear
    1987
  • fDate
    11/1/1987 12:00:00 AM
  • Firstpage
    2380
  • Lastpage
    2380
  • Keywords
    Chemical lasers; Chemical vapor deposition; Gallium arsenide; Indium phosphide; Laboratories; Laser stability; MOCVD; Molecular beam epitaxial growth; Quantum well lasers; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.23306
  • Filename
    1487017
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1119111