DocumentCode :
1119111
Title :
VB-6 continuous room-temperature laser operation of Al
x
Ga
1-x
As-GaAs quantum well heterostructures grown on Si
Author :
Deppe, Dennis G. ; Nam, D.W. ; Hsieh, Kenny Cheng-Hsiang ; Matyi, Richard J. ; Lee, Jae W. ; Shichijo, H. ; Epler, J.E. ; Burnham, R.D. ; Chung, H.F. ; Paoli, T.L.
Volume :
34
Issue :
11
fYear :
1987
fDate :
11/1/1987 12:00:00 AM
Firstpage :
2380
Lastpage :
2380
Keywords :
Chemical lasers; Chemical vapor deposition; Gallium arsenide; Indium phosphide; Laboratories; Laser stability; MOCVD; Molecular beam epitaxial growth; Quantum well lasers; Substrates;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.23306
Filename :
1487017
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1119111
