Title :
An n-channel BICFET in the InGaAs/InAlGaAs/InAlAs material system
Author :
Kiely, P.A. ; Taylor, Geoffrey W. ; Izabelle, A. ; Lebby, M.S. ; Tell, B. ; Brown-Goebeler, K.F. ; Chang, Tao-yuan
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
fDate :
7/1/1989 12:00:00 AM
Abstract :
An n-channel BICFET in the InGaAs/InAlGaAs/InAlAs material system with a current gain in a large-area device of greater than 900 is discussed. The device structure utilizes a self-aligned refractory emitter contact and high-temperature processing and still obtains an ideality factor of 1.2 for the source input diode.<>
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; heterojunction bipolar transistors; indium compounds; BICFET; HBT; III-V semiconductors; InGaAs-InAlGaAs-InAlAs; bipolar inversion channel FET; current gain; heterojunction material system; high-temperature processing; large-area device; n-channel; self-aligned refractory emitter contact; Conducting materials; Diodes; Etching; FETs; Heterojunctions; Indium compounds; Indium gallium arsenide; Indium phosphide; Substrates;
Journal_Title :
Electron Device Letters, IEEE
