DocumentCode :
1119159
Title :
VIA-3 Resonant-tunneling hot-electron transistors (RHET´s) using InGaAs/In(AlGa)As heterostructure
Author :
Imamura, Kousuke ; Muto, Salvatore ; Ohnishi, H. ; Fujii, Teruya ; Yokoyama, Naoki
Volume :
34
Issue :
11
fYear :
1987
fDate :
11/1/1987 12:00:00 AM
Firstpage :
2382
Lastpage :
2382
Keywords :
Current measurement; Electrons; Gain measurement; Gallium arsenide; Indium gallium arsenide; Infrared detectors; Resonance; Resonant tunneling devices; Superlattices; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.23310
Filename :
1487021
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1119159
