Title :
DC and AC characteristics of delta-doped GaAs FET
Author :
Hong, Won-Pyo ; Harbison, J. ; Florez, L. ; Abeles, Joseph H.
Author_Institution :
Bell Commun. Res., Red Bank, NJ, USA
fDate :
7/1/1989 12:00:00 AM
Abstract :
Molecular-beam-epitaxy-grown GaAs field-effect transistors (FETs) using a delta-doped channel are discussed. FETs having gate lengths of 1.3 mu m showed transconductances as high as 290 mS/mm at a current density of 200 mA/mm. The measured f/sub T/ was 14.5 GHz and the extracted f/sub max/ was 30 GHz. These results are the best reported in a FET with this material structure having a delta-doped channel.<>
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; molecular beam epitaxial growth; semiconductor doping; solid-state microwave devices; 0 to 30 GHz; 1.3 micron; 290 mS; AC characteristics; DC characteristics; FET; GaAs; HEMT; III-V semiconductors; MBE; SHF; delta-doped channel; field-effect transistors; gate lengths; microwave performance; molecular beam epitaxy; planar doping; sheet doping; transconductances; Doping; Epitaxial layers; FETs; Gallium arsenide; Insulation; Molecular beam epitaxial growth; Silicon; Substrates; Temperature; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
