Extremely high peak specific transconductance AlGaAs/GaAs heterojunction bipolar transistors

Author

Barker, Dean ; Ashizawa, Yasuo ; Tasker, Paul ; Tadayon, Bijan ; Eastman, Lester F.

Volume

10

Issue

7

fYear

1989

fDate

7/1/1989 12:00:00 AM

Firstpage

313

Lastpage

315

Abstract

Self-aligned AlGaAs/GAs heterojunction bipolar transistors with peak specific transconductances as high as 25 mS/ mu m/sup 2/ of emitter area are discussed. These are the highest specific transconductances ever reported for a bipolar transistor. These devices, which contain no indium in the emitter, display specific parasitic emitter resistances of less than 1*10/sup -7/ Omega -cm/sup 2/. This low parasitic resistance is attributed to an improved n-type contact technology, in which a molybdenum diffusion barrier and a plasma-enhanced chemical vapor deposition SiO/sub 2/ overlayer are used to achieve low specific contact resistivities.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; 25 mS; AlGaAs-GaAs; HBT; III-V semiconductors; Mo diffusion barrier; SiO/sub 2/ overlayer; chemical vapor deposition; heterojunction bipolar transistors; high peak specific transconductance; low parasitic resistance; low specific contact resistivities; n-type contact technology; plasma enhanced CVD; self-aligned devices; Bipolar transistors; Chemical technology; Contact resistance; Gallium arsenide; Heterojunction bipolar transistors; Indium; Plasma chemistry; Plasma devices; Plasma displays; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.29663

Filename

29663