Title :
Extremely high peak specific transconductance AlGaAs/GaAs heterojunction bipolar transistors
Author :
Barker, Dean ; Ashizawa, Yasuo ; Tasker, Paul ; Tadayon, Bijan ; Eastman, Lester F.
fDate :
7/1/1989 12:00:00 AM
Abstract :
Self-aligned AlGaAs/GAs heterojunction bipolar transistors with peak specific transconductances as high as 25 mS/ mu m/sup 2/ of emitter area are discussed. These are the highest specific transconductances ever reported for a bipolar transistor. These devices, which contain no indium in the emitter, display specific parasitic emitter resistances of less than 1*10/sup -7/ Omega -cm/sup 2/. This low parasitic resistance is attributed to an improved n-type contact technology, in which a molybdenum diffusion barrier and a plasma-enhanced chemical vapor deposition SiO/sub 2/ overlayer are used to achieve low specific contact resistivities.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; 25 mS; AlGaAs-GaAs; HBT; III-V semiconductors; Mo diffusion barrier; SiO/sub 2/ overlayer; chemical vapor deposition; heterojunction bipolar transistors; high peak specific transconductance; low parasitic resistance; low specific contact resistivities; n-type contact technology; plasma enhanced CVD; self-aligned devices; Bipolar transistors; Chemical technology; Contact resistance; Gallium arsenide; Heterojunction bipolar transistors; Indium; Plasma chemistry; Plasma devices; Plasma displays; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
