Title :
VIA-8 high-performance GaInAs interdigitated-metal-semiconductor-metal (IMSM) 1.3-µm photodetector grown on a GaAs substrate
Author :
Rogers, D.L. ; Woodall, Jerry M. ; McInturff, D.
fDate :
11/1/1987 12:00:00 AM
Keywords :
Degradation; Electron devices; Gallium arsenide; Hot carriers; MESFETs; Optical surface waves; Photodetectors; Radiation detectors; Stress; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23314
