DocumentCode :
1119210
Title :
VIA-7 device characteristics of the Pd-SnOxMIS oxygen sensors
Author :
Xu, J.F. ; Kang, W.P. ; Lalevic, B.
Volume :
34
Issue :
11
fYear :
1987
fDate :
11/1/1987 12:00:00 AM
Firstpage :
2383
Lastpage :
2383
Keywords :
Capacitors; Chemicals; Gallium arsenide; Molecular beam epitaxial growth; Photodetectors; Radiation detectors; Sensor phenomena and characterization; Substrates; Temperature sensors; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.23315
Filename :
1487026
Link To Document :
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