Title :
Barrier-Layer Scaling of InAlN/GaN HEMTs
Author :
Medjdoub, F. ; Alomari, M. ; Carlin, J.-F. ; Gonschorek, M. ; Feltin, E. ; Py, M.A. ; Grandjean, N. ; Kohn, E.
Author_Institution :
Univ. of Ulm, Ulm
fDate :
5/1/2008 12:00:00 AM
Abstract :
We discuss the characteristics of high-electron mobility transistors with barrier thicknesses between 33 and 3 nm, which are grown on sapphire substrates by metal-organic chemical vapor deposition. The maximum drain current (at VG = 2.0 V) decreased with decreasing barrier thickness due to the gate forward drive limitation and residual surface-depletion effect. Full pinchoff and low leakage are observed. Even with 3-nm ultrathin barrier, the heterostructure and contacts are thermally highly stable (up to 1000degC).
Keywords :
III-V semiconductors; MOCVD coatings; aluminium compounds; electron mobility; gallium compounds; high electron mobility transistors; indium compounds; sapphire; HEMT; InAlN-GaN; barrier-layer scaling; gate forward drive limitation; metal-organic chemical vapor deposition; residual surface-depletion effect; size 3 nm to 33 nm; ultrathin barrier; GaN based; InAlN barrier; high-electron mobility transistors (HEMTs); microwave devices; scaling;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.919377
