Title :
VIB-1 new hot-carrier-induced degradation phenomena in half-micrometer MOS transistors
Author :
Nitayama, A. ; Hamamoto, Takayuki ; Oowaki, Yukihito
fDate :
11/1/1987 12:00:00 AM
Keywords :
Degradation; Electrodes; Hot carriers; Impact ionization; MOSFETs; Secondary generated hot electron injection; Shadow mapping; Stress; Very large scale integration; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23316
