Title :
p-channel germanium MOSFETs with high channel mobility
Author :
Martin, Suzanne C. ; Hitt, Lorin M. ; Rosenberg, James J.
Author_Institution :
Div. of Eng., Brown Univ., Providence, RI, USA
fDate :
7/1/1989 12:00:00 AM
Abstract :
The fabrication and performance of p-channel germanium MOSFETs having a nitrided native oxide gate insulator are reported. A self-aligned dummy-gate process suitable for circuit integration is utilized. Common-source characteristics exhibit no looping and indicate a peak room-temperature channel mobility of 770 cm/sup 2//V-s. These results provide further evidence that a high-performance germanium CMOS technology is possible.<>
Keywords :
CMOS integrated circuits; elemental semiconductors; germanium; insulated gate field effect transistors; CMOS technology; Ge; MOSFETs; circuit integration; common source characteristics; elemental semiconductors; fabrication; high channel mobility; nitrided native oxide gate insulator; p-channel; self-aligned dummy-gate process; CMOS technology; Charge carrier processes; Electron mobility; Fabrication; Germanium; Implants; Insulation; MOSFETs; Resists; Silicon;
Journal_Title :
Electron Device Letters, IEEE
