DocumentCode :
1119229
Title :
VIB-2 Hot-carrier-induced degradation in MOSFET´s studied by recovery temperature spectroscopy (RTS)
Author :
Saitoh, Masatoshi ; Kinugawa, M. ; Hashimoto, Koji
Volume :
34
Issue :
11
fYear :
1987
fDate :
11/1/1987 12:00:00 AM
Firstpage :
2384
Lastpage :
2384
Keywords :
Annealing; Charge carrier processes; Chemicals; Hot carriers; MOSFET circuits; Resistance heating; Spectroscopy; Stress; Temperature; Thermal degradation;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.23317
Filename :
1487028
Link To Document :
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